改性纳米或微米SiO2的分散方法对木粉-SiO2/聚丙烯复合材料力学性能的影响

Effect of dispersion method of modified nano or micro SiO2 on mechanical properties of wood flour-SiO2/polypropylene composites

  • 摘要: 未改性和乙烯基三甲氧基硅烷(VTS)改性的纳米SiO2和微米SiO2作为增强相,采用直接分散(干分散)和溶液分散(湿分散)两种方法将SiO2添加到聚丙烯(PP)基体中。将木粉(WF)作为改性相添加到SiO2改性的PP中制备WF-SiO2/PP复合材料,探索SiO2粒径、分散度及界面改性对复合材料增强效果的影响。红外光谱显示改性后的SiO2已经成功接枝到PP基体上;与未填充SiO2的WF/PP复合材料相比,干分散模式添加质量比为9%的微米SiO2或9%的纳米SiO2,WF-SiO2/PP复合材料的弯曲强度分别降低了21%和18%;然而,湿分散模式以VTS改性微米SiO2和纳米SiO2,WF-SiO2/PP复合材料弯曲模量分别提高了17%和22%,且抗蠕变性能也明显改善;通过干分散和湿分散模式添加微米SiO2,均使WF-SiO2/PP复合材料冲击强度提高了17%。研究表明,在SiO2粒子分散均匀且与基体界面结合良好的前提下,加入适量微米SiO2或纳米SiO2使WF-SiO2/PP复合材料的冲击强度提高了15%~25%。

     

    Abstract: The unmodified and vinyl trimethoxysilane (VTS) modified nano SiO2 and micro SiO2 were used as the reinforcement phases to incorporate into polypropylene (PP) by direct dispersion (dry dispersion) or by dispersion in solution (wet dispersion), respectively. The wood flour (WF) was used as modifier to prepare WF-SiO2/PP composites. The effects of the SiO2 particle size, dispersibility and interfacial modification on the reinforcement of the WF-SiO2/PP composites were determined. Infra-red spectra show that SiO2 is grafted onto the PP matrix. Compared with the unfilled WF/PP composites, the resulting WF-SiO2/PP composites incorporated with 9% micro SiO2 or 9% nano SiO2 (mass ratio) via dry dispersion mode exhibit 21% and 18% reduction in the flexural strength, respectively. However, wet dispersion and VTS modification result in 17% and 22% increase in flexural modulus for incorporating the micro SiO2 and nano SiO2, respectively. The creep resistance is also improved obviously via wet dispersion process and VTS modification. The impact strength of the WF-SiO2/PP composites increases by 17% by filling the micro SiO2 via dry or wet dispersed modes. This study demonstrates that adding proper amount of nano or micro SiO2 can increase the impact strenth of WF-SiO2/PP composites by 15%-25% on the premise of a uniform dispersion and establishment of a well-bonded interface between the SiO2 and the matrix.

     

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